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  NJG1602HE3 - 1 - ver.2003-05-20 dpdt switch gaas mmic q general description q package outline NJG1602HE3 is a gaas high power dpdt switch mmic for antenna switch of tri- and dual-mode cellular phone application such as cdma, gps and pcs. this switch features low loss, high isolation at high power. this device includes logic decoder function, and can be operated by 1 bit control signal for path switching. the ultra small & ultra thin usb12 package is adopted. q features o low voltage operation +2.5v min. o pin at 0.2dbcompression point 36dbm typ. @f=0.9ghz, v ctl =2.7v o low insertion loss 0.3db typ. @f=0.9ghz, p in =25dbm, v ctl =2.7v 0.55db typ. @f=1.9ghz, p in =25dbm, v ctl =2.7v o high isolation 21db typ. @f=0.9ghz, p in =25dbm, v ctl =2.7v 15db typ. @f=1.9ghz, p in =25dbm, v ctl =2.7v o low current consumption 17ua typ. @f=0.9ghz, p in =25dbm, v ctl =2.7v o ultra small & ultra thin package usb12-e3 (package size: 2.35x2.35x0.75mm) q pin configuration q truth table pin connection 1. vdd 2. p1 3. gnd 4. p2 5. gnd 6. p3 7. gnd 8. p4 9. gnd 10.gnd 11.gnd 12.ctl usb12type (top view) note: please note that any information on this catalog will be subject to change. 1 10 9 8 7 6 5 4 3 2 12 11 ?h?=ctl(h) , ?l?=ctl(l) ctl h p1-p4, p2-p3 l p1-p2, p3-p4 on on off off
NJG1602HE3 - 2 - ver.2003-05-20 q absolute maximum ratings (t a =+25c, z s =z l =50 ? ) parameter symbol conditions conditions units rf input power p in v dd =2.7v, ctl=0v/2.7v 37 dbm supply voltage v dd vdd terminal 7.5 v control voltage v ctl ctl terminal 7.5 v power dissipation p d 250 mw operating temp. t opr -40~+85 c storage temp. t stg -55~+150 c q electrical characteristics (general conditions: t a =+25c, z s =z l =50 ? , v dd =2.7v, ctl(l)=0v, ctl(h)=2.7v ) parameters symbol conditions min typ max units operating current i dd p in =25dbm - 70 100 ua supply voltage v dd - 2.7 5.5 v control voltage (low) ctl(l) 0 - 0.8 v control voltage (high) ctl(h) 2.5 2.7 v dd v control current i ctl f=0.9ghz, p in =25dbm - 17 30 ua insertion loss 1 loss1 f=0.9ghz, p in =25dbm - 0.3 0.4 db insertion loss 2 loss2 f=1.9ghz, p in =25dbm - 0.55 0.7 db isolation 1 isl1 f=0.9ghz, p in =25dbm 20 21 - db isolation 2 isl2 f=1.9ghz, p in =25dbm 14 15 - db pin at 0.2db compression point p -0.2db f=1.9ghz 33 36 - dbm 2nd harmonics 1 2fo(1) f=0.9ghz, p in =25dbm - -80 -65 dbc 2nd harmonics 2 2fo(2) f=1.9ghz, p in =25dbm - -75 -70 dbc 3rd harmonics 1 3fo(1) f=0.9ghz, p in =25dbm - -75 -60 dbc 3rd harmonics 2 3fo(2) f=1.9ghz, p in =25dbm - -70 -60 dbc input 3 rd order intercept point 1 iip3(1) f=900+901mhz, pin=25dbm *1 56 62 - dbm input 3 rd order intercept point 2 iip3(2) f=1900+1901mhz, pin=25dbm *1 54 60 - dbm vswr vswr i on-state ports, f=0.9ghz - 1.1 1.4 switching time t sw f=0.1~2.5ghz - 1.2 - us *1: the input ip3 is defined as following equation. iip3=(3 x pout - im3) / 2 + loss
NJG1602HE3 - 3 - ver.2003-05-20 q terminal information no. symbol description 1 vdd positive voltage supply terminal. the positive voltage (+2.5~+5.5v) have to be supplied. please connect a bypass capacitor with gnd terminal for excellent rf performance. 2 p1 rf port. this port is connected with p4 port by controlling 12pin-ctl(h) (+2.5~+vdd). this port is connected with p2 port by controlling 12pin- ctl(l) (0~+0.8v) . a dc cut capacitor 56pf is required at this terminal to block dc voltage of inner circuit. 3 gnd ground terminal. please connect this terminal with ground plane as close as possible for excellent rf performance. 4 p2 rf port. this port is connected with p3 port by controlling 12pin- ctl(l) (0.2~+0.8v). this port is connected with p3 port by controlling 12pin- ctl(h)(+2.5~+vdd). a dc cut capacitor 56pf is required at this terminal to block dc voltage of inner circuit. 5 gnd ground terminal. please connect this terminal with ground plane as close as possible for excellent rf performance. 6 p3 rf port. this port is connected with p2 port by controlling 12pin- ctl(h) (+2.5~+vdd). this port is connected with p4 port by controlling 12pin-v ctl(l) (0~+0.8v). a dc cut capacitor 56pf is required at this terminal to block dc voltage of inner circuit. 7 gnd ground terminal. please connect this terminal with ground plane as close as possible for excellent rf performance. 8 p4 rf port. this port is connected with p1 port by controlling 12pin- ctl(h) (+2.5~+vdd). this port is connected with p3 port by controlling 12pin- ctl(l) (0~+0.8v). a dc cut capacitor 56pf is required at this terminal to block dc voltage of inner circuit. 9 gnd ground terminal. please connect this terminal with ground plane as close as possible for excellent rf performance. 10 gnd ground terminal. please connect this terminal with ground plane as close as possible for excellent rf performance. 11 gnd ground terminal. please connect this terminal with ground plane as close as possible for excellent rf performance. 12 ctl control signal input terminal. this terminal is set to high-level (+2.5v~vdd) or low-level (0~+0.8v).
NJG1602HE3 - 4 - ver.2003-05-20 q electrical characteristics (0.1~3.0ghz, with application circuit, lo sses of external circuit are excluded) -2.0 -1.5 -1.0 -0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 frequency(ghz) (v dd =2.7v, v ctl =0v) p1-p2 insertion loss vs. frequency insertion loss(db) -2.0 -1.5 -1.0 -0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 frequency(ghz) (v dd =2.7v, v ctl =0v) p3-p4 insertion loss vs. frequency insertion loss(db) -2.0 -1.5 -1.0 -0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 frequency(ghz) (v dd =2.7v, v ctl =2.7v) p1-p4 insertion loss vs. frequency insertion loss(db) -2.0 -1.5 -1.0 -0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 frequency(ghz) (v dd =2.7v, v ctl =2.7v) p2-p3 insertion loss vs. frequency insertion loss(db) 1.0 1.2 1.4 1.6 1.8 2.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 frequency(ghz) (v dd =2.7v, v ctl =0v, p1port) p1-p2 vswr vs. frequency vswr 1.0 1.2 1.4 1.6 1.8 2.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 frequency(ghz) (v dd =2.7v, v ctl =2.7v, p4port) p1-p4 vswr vs. frequency vswr
NJG1602HE3 - 5 - ver.2003-05-20 -2.0 -1.5 -1.0 -0.5 0.0 18 20 22 24 26 28 30 32 34 36 38 vdd=2.5v vdd=2.7v vdd=5.5v input power(dbm) (p1-p2 on, f=0.9ghz) insertion loss vs. input power insertion loss(db) -2.0 -1.5 -1.0 -0.5 0.0 18 20 22 24 26 28 30 32 34 36 38 vdd=2.5v vdd=2.7v vdd=5.5v input power(dbm) (p1-p2 on, f=1.9ghz) insertion loss vs. input power insertion loss(db) q electrical characteristics (0.1~3.0ghz, with application circuit, lo sses of external circuit are excluded) -45 -40 -35 -30 -25 -20 -15 -10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 frequency(ghz) (v dd =2.7v, v ctl =2.7v) p1-p2 isolation vs. frequency isolation(db) -45 -40 -35 -30 -25 -20 -15 -10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 frequency(ghz) (v dd =2.7v, v ctl =2.7v) p3-p4 isolation vs. frequency isolation(db) -45 -40 -35 -30 -25 -20 -15 -10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 frequency(ghz) (v dd =2.7v, v ctl =0v) p1-p4 isolation vs. frequency isolation(db) -45 -40 -35 -30 -25 -20 -15 -10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 frequency(ghz) (v dd =2.7v, v ctl =0v) p2-p3 isolation vs. frequency isolation(db)
NJG1602HE3 - 6 - ver.2003-05-20 0 50 100 150 200 250 18 20 22 24 26 28 30 32 34 36 38 vdd=2.5v vdd=2.7v vdd=5.5v input power(dbm) (p1-p2 on, f=0.9ghz) idd vs. input power idd(ua) 0 50 100 150 200 250 18 20 22 24 26 28 30 32 34 36 38 vdd=2.5v vdd=2.7v vdd=5.5v input power(dbm) (p1-p2 on, f=1.9ghz) idd(ua) idd vs. input power q electrical characteristics (with application circuit ) -25 -20 -15 -10 18 20 22 24 26 28 30 32 34 36 38 vdd=2.5v vdd=2.7v vdd=5.5v input power(dbm) p1-p2 isolation(db) (p1-p4 on, ctl=2.7v, f=0.9ghz) isolation vs.input power -25 -20 -15 -10 18 20 22 24 26 28 30 32 34 36 38 vdd=2.5v vdd=2.7v vdd=5.5v input power(dbm) p1-p2 isolation(db) (p1-p4 on, ctl=2.7v, f=1.9ghz) isolation vs.input power
NJG1602HE3 - 7 - ver.2003-05-20 -110 -100 -90 -80 -70 -60 -50 -40 -30 16 18 20 22 24 26 28 30 32 vdd=2.5v vdd=2.7v vdd=5.5v input 2fo level 2nd harmonics(dbc) input power(dbm) (p1-p2 on, f=0.9ghz) 2nd harmonics vs. input power -110 -100 -90 -80 -70 -60 -50 -40 -30 16 18 20 22 24 26 28 30 32 vdd=2.5v vdd=2.7v vdd=5.5v input 2fo level 2nd harmonics(dbc) input power(dbm) (p1-p2 on, f=1.9ghz) 2nd harmonics vs. input power -110 -100 -90 -80 -70 -60 -50 -40 -30 16 18 20 22 24 26 28 30 32 vdd=2.5v vdd=2.7v vdd=5.5v input 3fo level input power(dbm) 3rd harmonics(dbc) (p1-p2 on, f=1.9ghz) 3rd harmonics vs. input power q electrical characteristics (with application circuit ) -110 -100 -90 -80 -70 -60 -50 -40 -30 16 18 20 22 24 26 28 30 32 vdd=2.5v vdd=2.7v vdd=5.5v input 3fo level 3rd harmonics(dbc) input power(dbm) (p1-p2 on, f=0.9ghz) 3rd harmonics vs. input power
NJG1602HE3 - 8 - ver.2003-05-20 35 40 45 50 55 60 65 70 20 21 22 23 24 25 26 27 vdd=2.5v vdd=2.7v vdd=5.5v input power(dbm) (p1-p2 on, f=900+901mhz) iip3(dbm) iip3 vs. input power -80 -70 -60 -50 -40 -30 -20 -10 0 20 21 22 23 24 25 26 27 vdd=2.5v vdd=2.7v vdd=5.5v input power(dbm) (p1-p2 on, f=900+901mhz) im3(dbm) im3 vs. input power 35 40 45 50 55 60 65 70 20 21 22 23 24 25 26 27 vdd=2.5v vdd=2.7v vdd=5.5v input power(dbm) (p1-p2 on, f=1900+1901mhz) iip3(dbm) iip3 vs. input power -80 -70 -60 -50 -40 -30 -20 -10 0 20 21 22 23 24 25 26 27 vdd=2.5v vdd=2.7v vdd=5.5v input power(dbm) (p1-p2 on, f=1900+1901mhz) im3(dbm) im3 vs. input power q electrical characteristics (with application circuit ) -70 -50 -30 -10 10 30 50 70 20 30 40 50 60 70 im3,output power(dbm) input power(dbm) output power im3 iip3=61.4dbm (input power=25dbm) (p1-p2 on, v dd =2.7v, v ctl =0v, f=900+901mhz) output power,im3 vs. input power -70 -50 -30 -10 10 30 50 70 20 30 40 50 60 70 im3,output power(dbm) input power(dbm) output power im3 iip3=58.6dbm (input power=25dbm) (p1-p2 on, v dd =2.7v, v ctl =0v, f=1900+1901mhz) output power,im3 vs. input power
NJG1602HE3 - 9 - ver.2003-05-20 -2.0 -1.5 -1.0 -0.5 0.0 vdd=2.5v vdd=2.7v vdd=5.5v -50 0 50 100 (p1-p2 on, f=0.9ghz, pin=25dbm) insertion loss vs. ambient temperature insertion loss(db) ambient temperature( o c) -2.0 -1.5 -1.0 -0.5 0.0 vdd=2.5v vdd=2.7v vdd=5.5v -50 0 50 100 ambient temperature( o c) (p1-p2 on, f=1.9ghz, pin=25dbm) insertion loss vs. ambient temperature insertion loss(db) 0 50 100 150 200 250 vdd=2.5v vdd=2.7v vdd=5.5v -50 0 50 100 (p1-p2 on, f=0.9ghz, pin=25dbm) idd vs. ambient temperature idd(ua) ambient temperature( o c) 0 50 100 150 200 250 vdd=2.5v vdd=2.7v vdd=5.5v -50 0 50 100 (p1-p2 on, f=1.9ghz, pin=25dbm) idd vs. ambient temperature idd(ua) ambient temperature( o c) q electrical characteristics (with application circuit, losses of external circuit are excluded) q electrical characteristics (with application circuit ) -25 -20 -15 -10 vdd=2.5v vdd=2.7v vdd=5.5v -50 0 50 100 (p1-p4 on, f=0.9ghz, pin=25dbm) isolation vs. ambient temperature p1-p2 isolation(db) ambient temperature( o c) -25 -20 -15 -10 vdd=2.5v vdd=2.7v vdd=5.5v -50 0 50 100 (p1-p4 on, f=1.9ghz, pin=25dbm) isolation vs. ambient temperature p1-p2 isolation(db) ambient temperature( o c)
NJG1602HE3 - 10 - ver.2003-05-20 30 31 32 33 34 35 36 37 38 -50 0 50 100 vdd=2.5v vdd=2.7v vdd=5.5v compliance ambient temperature( o c) p-0.2db(dbm) (p1-p2 on, f=0.9ghz) p-0.2db vs. ambient temperature 30 31 32 33 34 35 36 37 38 -50 0 50 100 vdd=2.5v vdd=2.7v vdd=5.5v compliance p-0.2db(dbm) ambient temperature( o c) (p1-p2 on, f=1.9ghz) p-0.2db vs. ambient temperature -110 -100 -90 -80 -70 -60 -50 -40 -30 vdd=2.5v vdd=2.7v vdd=5.5v -50 0 50 100 ambient temperature( o c) (p1-p2 on, f=0.9ghz, pin=25dbm) 2nd harmonics vs. ambient temperature 2nd harmonics(dbc) -110 -100 -90 -80 -70 -60 -50 -40 -30 vdd=2.5v vdd=2.7v vdd=5.5v -50 0 50 100 ambient temperature( o c) (p1-p2 on, f=0.9ghz, pin=25dbm) 3rd harmonics vs. ambient temperature 3rd harmonics(dbc) q electrical characteristics (with application circuit ) -110 -100 -90 -80 -70 -60 -50 -40 -30 vdd=2.5v vdd=2.7v vdd=5.5v -50 0 50 100 ambient temperature( o c) (p1-p2 on, f=1.9ghz, pin=25dbm) 2nd harmonics vs. ambient temperature 2nd harmonics(dbc) -110 -100 -90 -80 -70 -60 -50 -40 -30 vdd=2.5v vdd=2.7v vdd=5.5v -50 0 50 100 ambient temperature( o c) (p1-p2 on, f=1.9ghz, pin=25dbm) 3rd harmonics vs. ambient temperature 3rd harmonics(dbc)
NJG1602HE3 - 11 - ver.2003-05-20 45 50 55 60 65 70 vdd=2.5v vdd=2.7v vdd=5.5v -50 0 50 100 ambient temperature( o c) (p1-p2 on, f=900+901mhz, pin=25dbm) iip3 vs. ambient temperature iip3(dbm) -70 -60 -50 -40 -30 -20 -10 0 vdd=2.5v vdd=2.7v vdd=5.5v -50 0 50 100 ambient temperature( o c) (p1-p2 on, f=900+901mhz, pin=25dbm) im3 vs. ambient temperature im3(dbm) switching speed (vctl(l)=0v, vctl(h)=2.7v) 1.2us q electrical characteristics (with application circuit ) 45 50 55 60 65 70 vdd=2.5v vdd=2.7v vdd=5.5v -50 0 50 100 ambient temperature( o c) (p1-p2 on, f=1900+1901mhz, pin=25dbm) iip3 vs. ambient temperature iip3(dbm) -70 -60 -50 -40 -30 -20 -10 0 vdd=2.5v vdd=2.7v vdd=5.5v -50 0 50 100 ambient temperature( o c) (p1-p2 on, f=1900+1901mhz, pin=25dbm) im3 vs. ambient temperature im3(dbm)
NJG1602HE3 - 12 - ver.2003-05-20 q package outline (usb12-e3) q recommended pcb design q parts list parts notes c1 1000pf murata (grp15) c2~c5 56pf murata (grp15) p1 p2 p4 p3 vdd ctl c4 gnd c2 c1 c5 c3 mark q circuit losses including losses of capacitors and connectors frequency 900mhz 1.9ghz loss(db) 0.20db 0.32db 12 11 10 4 5 6 3 2 1 7 8 9 p2 c 3 p 1 c 2 p 3 c 4 p 4 c5 c 1 ctl vdd pcb size=26mmx26mm pcb: fr-4, t=0.5mm capacitor: size 1005 strip line width=1.0mm (z 0 =50 ? )
NJG1602HE3 - 13 - ver.2003-05-20 q measuring block diagram power meter hpa r&k a0825-4343-r att 3db -20db coupler hp 778d dut power meter att 3db -20db coupler hp 778d signal generator e4425b 50 ? isolator isolator power meter hpa r&k a0825-4343-r isolator att 3db -20db coupler hp 778d dut isolator rohde&schwarz fsem30 10db att signal generator e4425b 30db att signal generator e4432b signal generator e4425b dut spectrum analyzer e4440a 30db att step att power divider/combiner hpa r&k a0825-4343-r hpa r&k a0825-4343-r isolator isolator pin-pout measuring block diagram 2fo, 3fo measuring block diagram im3, iip3 measuring block diagram
NJG1602HE3 - 14 - ver.2003-05-20 terminal treat :au pcb :fr5 molding material : epoxy resin unit :mm weight :17mg 0.75 0.05 2.35 0.05 2.35 0.05 0.3 3- 0.2 0.1 12-0.2 0.05 0.5 0.5 r 0 . 0 7 5 1.1 0.1 0.038 0.01 1 2 3 4 5 6 7 8 9 10 11 12 0.1 0.14 0.05 0.5 0.65 0.2 0.1 9-0.15 9-0.35 q package outline (usb12-e3) cautions on using this product this product contains gallium-arsenide (gaas) which is a harmful material. ? do not eat or put into mouth. ? do not dispose in fire or break up this product. ? do not chemically make gas or powder with this product. ? to waste this p roduct, p lease obe y the relatin g law of y ou r countr y . [caution] the specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. the application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights.


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